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Energy-band alignment of atomic layer deposited (HfO<sub>2</sub>)<sub><em> x</em></sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>1 − <em> x</em></sub> gate dielectrics on 4H-SiC<xref ref-type="fn" rid="cpb142427fn1">*</xref>
Band offset determination for amorphous Al2O3 deposited on bulk AlN and atomic-layer epitaxial AlN on sapphire
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Band alignment and electrical properties of Al2O3/β-Ga2O3 heterojunctions: Applied Physics Letters: Vol 104, No 19
Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular
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Structural, electronic structure, and band alignment properties at epitaxial NiO/Al2O3 heterojunction evaluated from synchrotron based X-ray techniques: Journal of Applied Physics: Vol 119, No 16
Interpretation of the Changing the Band Gap of Al2O3 Depending on Its Crystalline Form: Connection with Different Local Symmetri
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BALD Engineering - Born in Finland, Born to ALD: Study on band-gaps of a variety of classic ALD high-k´s via REELS
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Elucidating the high-k insulator α-Al2O3 direct/indirect energy band gap type through density functional theory computations - ScienceDirect
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Energy Band Alignment of a Monolayer MoS2 with SiO2 and Al2O3 Insulators from Internal Photoemission - Shlyakhov - 2019 - physica status solidi (a) - Wiley Online Library
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Interpretation of the Changing the Band Gap of Al2O3 Depending on Its Crystalline Form: Connection with Different Local Symmetri
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Energy band gaps for -Al2O3, r-TiO2, m-ZrO2 and m-HfO2 calculated with... | Download Scientific Diagram
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Interpretation of the Changing the Band Gap of Al2O3 Depending on Its Crystalline Form: Connection with Different Local Symmetries | The Journal of Physical Chemistry C
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